安傑特科技股份有限公司 - 2024 EE前瞻技術大會

IIC TW2023 - 智慧應用生態大會

安傑特科技股份有限公司

ANJET CORPORATION

展位號碼: A03

安傑特為一家IC設計公司，主要專注於寬能隙功率元件SiC 及 GaN，於日本及台灣均設有設計中心。設計團隊來自全球知名半導體企業，且平均超過20年的專業經驗。與美、台的SiC基板供應商、晶圓廠、封裝廠和客戶已建立強大的生態系統合作夥伴關係。目前主要投資者為美國矽谷風險創投公司及一家位於新竹科學園區半導體集團公司。

ANJET is a Fabless IC design house specializing in wide-bandgap power devices SiC and GaN . There are IC design centers in Japan and Taiwan currently.
Professional engineering teams from Rohm, Renesas, Mitsubishi Electric, On semi, Hitachi, Sumitomo Denko, TI and etc., with an average of over 20 years of professional experience.
Strong ecosystem partnerships with SiC substrate providers, foundry, packaging house and customers.
The main investors currently include a Silicon Valley venture capital and a semiconductor group company located in the Hsinchu Science Park.

訪問官網 → 郵件聯絡 →

產品展示

SiC MOSFET

Key features：
· Best-in-class low Rsp:≒3.3mΩ･cm2
· Enough break down voltage
· Low Cgd
· Low cost
· High reliability

Product specifications：
650V / 750V / 1200V / 1700V
14mΩ、20mΩ、30mΩ、45mΩ、 80mΩ、 1000mΩ

Packaging：
TO-247AD-3L、TO-247HV-4L、TO-263-7L D²PAK、TOLL、TO-220AB-3L、TO-220FP-3L 點擊查看更多點擊收起
SiC SBD

Key features：
· Best-in-class low VF：1.35V
· High surge ruggedness
· Temperature independent switching behavior
· Low cost
· High reliability

Product specifications：
650V / 1200V / 1700V
2A~60A

Packaging：
TO-220AC-2L、TO-220FP-2L、TO-247AD-2L、TO-247AD-3L、TO-263-2L D²PAK、TO-252-2L DPAK、DFN 8×8 點擊查看更多點擊收起

生成海報，保存圖片轉發

